Tda31 1

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Tda31 1

Commit Message

The gas Tda31 1 film includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other.

Gas barrier film comprising a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] Tda31 1 the silicon compound layer [B] being in contact with each other.

Gas barrier film as described in claim 1 wherein the polymer base and the inorganic layer [A] sandwich Tda31 1 undercoat layer [C] that contains a structure in the Tda31 1 of a crosslinked product of a polyurethane compound [C1] having an aromatic ring structure.

Gas barrier film as described in either claim 1 wherein the inorganic layer [A] is either an inorganic layer [A1] that comprises a coexistence phase of zinc oxide, silicon dioxide, and aluminum oxide or an Tda31 1 layer [A2] that comprises a coexistence phase of zinc sulfide and silicon dioxide.

Gas barrier film as described in claim 3 wherein the inorganic layer [A] is the inorganic layer [A2] in which zinc sulfide accounts for a mole fraction of 0. Gas barrier film as described in claim 1 wherein in the silicon compound layer [B], the oxygen atom has an atomic composition ratio of 0.

An electronic device comprising gas barrier film as described in claim 1. A production method for gas barrier film comprising a step, or step a, for forming an inorganic layer [A] containing a zinc compound and silicon oxide on a polymer base by sputtering and another step, or step b, for forming a silicon compound layer [B] containing silicon oxynitride on the inorganic layer [A] by applying a coating liquid containing a silicon compound having a polysilazane backbone, drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere.

A production method for gas barrier film comprising a step, referred to as step c, for forming an undercoat layer [C] on a polymer base by applying a coating liquid containing a polyurethane compound [C1] having an aromatic ring structure, drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere, step a for forming an inorganic layer [A] containing a zinc compound and silicon oxide on the undercoat layer [C] by sputtering, and step b for forming a silicon compound layer [B] containing silicon oxide and silicon oxynitride on the inorganic layer [A] by applying a coating liquid containing a silicon compound having a polysilazane backbone, drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere.

Other gas barrier properties improvement techniques that do not use a film formation process such as plasma CVD include the use of a smooth-surfaced base or a base with an undercoat layer that provides a smooth surface free from protrusions and irregularities likely to cause pinholes and cracks that deteriorate the gas barrier properties Patent documents 2, 3, 4 and the use of a silicon oxide film or silicon oxynitride film produced through the conversion from a polysilazane film formed by wet coating Patent documents 5 and 6.

Patent Documents [] Patent document 1: HEI [] Patent document 2: A solution to the stabilization of gas barrier properties is thickening of the film, but this will lead to problems such as a decrease in flex resistance and an increase in production cost.

The method in which a smooth-surfaced base or a base provided with an undercoat layer that provides a smooth surface is used to form a gas barrier layer as proposed in Patent document 2 cannot achieve an expected enhancement of gas barrier properties although effective in preventing the formation of pinholes and cracks.

Compared to these, the methods proposed in Patent documents 3 and 4 have the problem of the difficulty in stably developing high gas barrier properties although some improvement in performance can be realized as a result of the improvement in film properties of the gas barrier layer.

In the case of the method of using a polysilazane layer to form a layer with gas barrier properties as proposed in Patent documents 5 and 6, furthermore, the layer production conditions can have large influence and a plurality of polysilazane layers have to be stacked to ensure stable formation of gas barrier film having required gas barrier properties, possibly causing problems such as deterioration in flex resistance and increase in production cost.

The gas barrier film according to an embodiment of the present invention includes an inorganic layer [A] containing a zinc compound and silicon oxide and a silicon compound layer [B] containing silicon oxynitride that are in contact with each other and stacked on one side of a polymer base 1 in this order from the polymer base 1.

Here, the example given in FIG. The graph given in FIG. Here, the plane where the atomic concentration of zinc comes to a minimum is defined as the boundary between the inorganic layer [A] and the silicon compound layer [B].

Features of the interface region [I] including its definition will be described later. Specifically, stacking the inorganic layer [A] and the silicon compound layer [B] in such a manner that they are in contact with each other allows the defects such as pinholes and cracks located within the inorganic layer [A] near its surface in contact with the silicon compound layer [B] to be filled with silicon oxynitride coming from the silicon compound layer [B], thereby developing high barrier properties.

The formation of the silicon compound layer [B] in contact with the inorganic layer [A] allows some components, such as zinc oxide, of the inorganic layer [A] to act as catalyst for improving the film properties of the silicon compound layer [B], thereby ensuring improved gas barrier properties.

In addition, some components of the inorganic layer [A] and those of the silicon compound layer [B] may form chemical bonds to realize a firm contact between the inorganic layer [A] and the silicon compound layer [B], leading to increased flex resistance.

The film may be in the form of a monolayer film or a bi- or multi-layered film produced by, for example, coextrusion.

In regard to film type, it may be a uniaxially or biaxially stretched film. Organic polymers used favorably for the present invention include, for example, crystalline polyolefins such as polyethylene and polypropylene; amorphous cyclic polyolefins having a cyclic structure; polyesters such as polyethylene terephthalate and polyethylene naphthalate; and various other polymers such as polyamide, polycarbonate, polystyrene, polyvinyl alcohol, saponification products of ethylene vinyl acetate copolymers, polyacrylonitrile, and polyacetal.

Of these, an amorphous cyclic polyolefin or polyethylene terephthalate, which have high transparency, versatility, and good mechanical characteristics, is preferably contained.

Tda31 1

Furthermore, the aforementioned organic polymer may be either a homopolymer or a copolymer, and the organic polymer may be a single polymer or a mixture of a plurality of polymers. The opposite surface to the one on which the inorganic layer [A] is to be formed may be coated with a coat layer of an organic substance, inorganic substance, or a mixture thereof with the aim of improving the slip properties of the film during the wind-up step.

For example, in order to ensure high gas barrier properties, the inorganic layer [A] is preferably either an inorganic layer [A1] that includes a coexistence phase of zinc oxide, silicon dioxide, and aluminum oxide or an inorganic layer [A2] that includes a coexistence phase of zinc sulfide and silicon dioxide.

The inorganic layer [A1] and the inorganic layer [A2] will be described in detail later. If the layer has a thickness of less than 10 nm, a sufficiently high degree of gas barrier properties may not be maintained at some positions, possibly leading to uneven gas barrier properties over the plane of the polymer base.

If the thickness of the layer is more than 1, nm, a large residual stress will take place in the layer, and cracks will be generated easily in the inorganic layer [A] under bending and external impact, possibly leading to deterioration in the gas barrier properties in the course of long-term use.

Therefore, the inorganic layer [A] preferably has a thickness of 10 nm or more and 1, nm or less, and from the viewpoint of maintaining required flexibility, the thickness is more preferably nm or more and nm or less.The Former Soviet Union and U.S.

Foreign Aid: Implementing the Assistance Program, This report, written in , provides historical background that may be useful to Congress as it considers funding levels, types of programs, and problems in implementation of U.S.

TDA24 datasheet & applicatoin notes - Datasheet Archive

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